MG100J7KS50 2001-08-16 1 toshiba gtr module silicon n channel igbt MG100J7KS50 high power switching applications motor control applications the electrodes are isolated from case. high input impedance 7 igbts built into 1 package. enhancement-mode high speed type igbt : v ce (sat) = 2.5 v (max) (@i c = 100 a) : t f = 0.5 s (max) (@i c = 100 a) : t rr = 0.3 s (max) (@i f = 100 a) equivalent circuit jedec D jeita D toshiba 2-110a1b weight: 520g (typ.) unit: mm
MG100J7KS50 2001-08-16 2 inverter stage maximum ratings (ta = 25c) characteristics symbol rating unit collector-emitter voltage v ces 600 v gate-emitter voltage v ges 20 v dc i c 100 collector current 1ms i cp 200 a dc i f 100 forward current 1ms i fm 200 a collector power dissipation (tc = 25c) p c 300 w junction temperature t j 150 c storage temperature range t stg ? 40 ~ 125 c isolation voltage v isol 2500 (ac 1min.) v screw torque (terminal / mounting) D 3 / 3 nm electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i ges v ge = 20v, v ce = 0v D D 500 na collector cut-off current i ces v ce = 600v, v ge = 0v D D 1.0 ma gate-emitter cut-off voltage v ge (off) v ce = 5 v, i c = 10 ma 5.0 D 8.0 v collector-emitter saturation voltage v ce (sat) i c = 100 a, v ge = 15 v D 2.0 2.5 v input capacitance c ies v ce = 10 v, v ge = 0 v, f = 1 mhz D 8.5 D nf forward voltage v f i f = 100 a D 2.3 3.0 v rise time t r D 0.12 0.24 turn-on time t on D 0.45 0.90 fall time t f D 0.20 0.50 turn-off time t off D 0.50 1.00 switching time reverse recovery time trr inductive load v cc = 300 v i c = 100 a v ge = 15 v r g = 13 ? (note 1) D 0.10 0.30 s r th (j-c) transistor stage D D 0.42 diode stage D D 1.00 thermal resistance r th (c-f) case to fin (note 2) D 0.05 D c / w note 2: silicone grease is applied.
MG100J7KS50 2001-08-16 3 brake stage maximum ratings (ta = 25c) characteristics symbol rating unit collector-emitter voltage v ces 600 v gate-emitter voltage v ges 20 v reverse voltage v r 600 v dc i c 50 collector current 1ms i cp 100 a dc i f 50 forward current 1ms i fm 100 a collector power dissipation (tc = 25c) p c 80 w junction temperature t j 150 c storage temperature range t stg ? 40 ~ 125 c isolation voltage v isol 2500 (ac 1 min.) v screw torque (terminal / mounting) D 3 / 3 nm electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i ges v ge = 20 v, v ce = 0 v D D 500 na collector cut-off current i ces v ce = 600 v, v ge = 0 v D D 1.0 ma gate-emitter cut-off voltage v ge (off) v ce = 5 v, i c = 5 ma 5.0 D 8.0 v collector-emitter saturation voltage v ce (sat) i c = 50 a, v ge = 15 v D 2.0 2.5 v input capacitance c ies v ce = 10 v, v ge = 0 v, f = 1 mhz D 4.0 D nf reverse current i r v r = 600 v D D 1.0 ma forward voltage v f i f = 50 a D 2.2 2.8 v rise time t r D 0.08 0.16 turn-on time t on D 0.10 0.20 fall time t f D 0.22 0.44 turn-off time t off D 0.50 1.00 switching time reverserecovery time trr inductive-load v cc = 300 v i c = 50 a v ge = 15 v r g = 24 ? (note 1) D 0.23 0.35 s r th (j-c) transistor stage D D 1.56 diode stage D D 2.00 thermal resistance r th (c-f) case to fin (note 2) D 0.05 D c / w note 2: silicone grease is applied.
MG100J7KS50 2001-08-16 4 note 1: switching time test circuit & timing chart
MG100J7KS50 2001-08-16 5 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ea a restrictions on product use
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